Speaker
James Veldhorst
(Covenant College)
Description
We studied various electrical properties of Nb/Mo bilayer films at low temperatures as a function of layer proportions with series varying both Nb and Mo (eg. holding Nb constant at 30nm with Mo ranging from 10 to 40 nm). After growing multiple series of Nb/Mo bilayers on silicon substrates at different configurations through magnetron sputtering, the samples were cooled to ~6K, where we explored their critical fields (H_{c2}) at low field strengths. Critical fields were measured using both resistive and inductive measurements on the samples under the influence of a magnetic field ranging from 0 to 120 Gauss. We also look at how the transition temperature of the films (T_c) vary with Nb and Mo layer thicknesses. We will compare our findings to the proximity effect theory for the T_c of thin film bilayers. We will also contrast the linearity of our resistive H_{c2} vs T data fits with the non-linearity of our inductive H_{c2} vs T plots.
